Krishna C. Saraswat : rechercher sur Z-Library

Campagne de collecte 15 septembre 2024 – 1 octobre 2024 C'est quoi, la collecte de fonds?

Le plus grand référentiel d'articles scientifiques au monde. 70,000,000+ d'articles gratuitement.

Campagne de collecte 15 septembre 2024 – 1 octobre 2024

Z-Library est une des plus grandes bibliothèques en ligne dans le monde, avec le stockage de plus de 17,000,000 livres et plus de 84,837,000 articles. Nous encourageons l'accès libre de chacun à la littérature. Aujourd'hui (15 septembre 2024) nous faisons un appel de fonds à tous ceux qui veulent contribuer encore plus au soutien et au développement de notre projet.

Les téléchargements SANS LIMITE sont aussi (au cours de 31 jours après la date de don) disponibles pour TOUS les utilisateurs qui soient en mesure de soutenir le projet pendant la période de collecte de fonds jusqu'au 1 octobre 2024.

C'est quoi, la collecte de fonds?En savoir plus

Livres
Articles (311)
Les plus populaires
Liste
- Liste
- Tableau

1

[IEEE 2019 4th International Conference on Internet of Things: Smart Innovation and Usages (IoT-SIU) - Ghaziabad, India (2019.4.18-2019.4.19)] 2019 4th International Conference on Internet of Things: Smart Innovation and Usages (IoT-SIU) - A Comparitive Analysis on E-Voting System Using Blockchain

Garg, Kanika, Saraswat, Pavi, Bisht, Sachin, Aggarwal, Sahil Kr., Kothuri, Sai Krishna, Gupta, Sahil

Année:

2019

Langue:

english

Fichier:

PDF, 233 KB

english, 2019

2

7-nm FinFET CMOS Design Enabled by Stress Engineering Using Si, Ge, and Sn

Gupta, Suyog, Moroz, Victor, Smith, Lee, Qiang Lu,, Saraswat, Krishna C.

Journal:

IEEE Transactions on Electron Devices

Année:

2014

Langue:

english

Fichier:

PDF, 2.13 MB

english, 2014

3

SPIE Proceedings [SPIE MOEMS-MEMS 2008 Micro and Nanofabrication - San Jose, CA (Saturday 19 January 2008)] MEMS/MOEMS Components and Their Applications V. Special Focus Topics: Transducers at the Micro-Nano Interface - Metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film-silicon Schottky contacts

Behnam, Ashkan, Johnson, Jason L., Choi, Yongho, Ertosun, M. Günhan, Wu, Zhuangchun, Rinzler, Andrew G., Kapur, Pawan, Saraswat, Krishna C., Ural, Ant, Tadigadapa, Srinivas A., Parviz, Babak A., Henni

Année:

2008

Langue:

english

Fichier:

PDF, 921 KB

english, 2008

4

Breakdown walkout in planar p-n junctions

Krishna C. Saraswat, James D. Meindl

Journal:

Solid-State Electronics

Année:

1978

Langue:

english

Fichier:

PDF, 679 KB

english, 1978

5

Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application

Kobayashi, Masaharu, Kinoshita, Atsuhiro, Saraswat, Krishna, Wong, H.-S. Philip, Nishi, Yoshio

Journal:

Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 1.05 MB

english, 2009

6

Direct bandgap germanium-on-silicon inferred from 57% 〈100〉 uniaxial tensile strain [Invited]

Sukhdeo, David S., Nam, Donguk, Kang, Ju-Hyung, Brongersma, Mark L., Saraswat, Krishna C.

Journal:

Photonics Research

Année:

2014

Langue:

english

Fichier:

PDF, 770 KB

english, 2014

7

Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics

Chen, Robert, Gupta, Suyog, Huang, Yi-Chiau, Huo, Yijie, Rudy, Charles W., Sanchez, Errol, Kim, Yihwan, Kamins, Theodore I., Saraswat, Krishna C., Harris, James S.

Journal:

Année:

2014

Langue:

english

Fichier:

PDF, 2.48 MB

english, 2014

8

[IEEE 2014 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2014.6.9-2014.6.12)] 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers - Monolithic three-dimensional integration of carbon nanotube FETs with silicon CMOS

Shulaker, Max M., Saraswat, Krishna, Wong, H.-S. Philip, Mitra, Subhasish

Année:

2014

Langue:

english

Fichier:

PDF, 1.35 MB

english, 2014

9

[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Characteristics of the Capacitorless Double Gate Quantum Well Single Transistor DRAM

Ertosun, M. Gunhan, Saraswat, Krishna C.

Année:

2009

Langue:

english

Fichier:

PDF, 1.00 MB

english, 2009

10

[IEEE 2013 IEEE 10th International Conference on Group IV Photonics (GFP) - Seoul, Korea (South) (2013.08.28-2013.08.30)] 10th International Conference on Group IV Photonics - Direct bandgap germanium nanowires inferred from 5.0% uniaxial tensile strain

Sukhdeo, David S., Nam, Donguk, Kang, Ju-Hyung, Petykiewicz, Jan, Lee, Jae Hyung, Jung, Woo Shik, Vuckovic, Jelena, Brongersma, Mark L., Saraswat, Krishna C.

Année:

2013

Langue:

english

Fichier:

PDF, 205 KB

english, 2013

11

Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping

Dutt, Birendra, Sukhdeo, Devanand S., Nam, Donguk, Vulovic, Boris M., Ze Yuan,, Saraswat, Krishna C.

Journal:

IEEE Photonics Journal

Année:

2012

Langue:

english

Fichier:

PDF, 1.19 MB

english, 2012

12

A Highly Scalable Capacitorless Double Gate Quantum Well Single Transistor DRAM: 1T-QW DRAM

Ertosun, M. GÜnhan, Kapur, Pawan, Saraswat, Krishna C.

Journal:

IEEE Electron Device Letters

Année:

2008

Langue:

english

Fichier:

PDF, 283 KB

english, 2008

13

Schottky barrier height reduction for holes by Fermi level depinning using metal/nickel oxide/silicon contacts

Islam, Raisul, Shine, Gautam, Saraswat, Krishna C.

Journal:

Applied Physics Letters

Année:

2014

Langue:

english

Fichier:

PDF, 932 KB

english, 2014

14

High temperature phase transformation of tantalum nitride films deposited by plasma enhanced atomic layer deposition for gate electrode applications

Sreenivasan, Raghavasimhan, Sugawara, Takuya, Saraswat, Krishna C., McIntyre, Paul C.

Journal:

Applied Physics Letters

Année:

2007

Langue:

english

Fichier:

PDF, 478 KB

english, 2007

15

Metal-semiconductor-metal photodetectors based on single-walled carbon nanotube film–GaAs Schottky contacts

Behnam, Ashkan, Johnson, Jason, Choi, Yongho, Noriega, Leila, Ertosun, M. Günhan, Wu, Zhuangchun, Rinzler, Andrew G., Kapur, Pawan, Saraswat, Krishna C., Ural, Ant

Journal:

Journal of Applied Physics

Année:

2008

Langue:

english

Fichier:

PDF, 830 KB

english, 2008

16

Achieving direct band gap in germanium through integration of Sn alloying and external strain

Gupta, Suyog, Magyari-Köpe, Blanka, Nishi, Yoshio, Saraswat, Krishna C.

Journal:

Journal of Applied Physics

Année:

2013

Langue:

english

Fichier:

PDF, 2.26 MB

english, 2013

17

[IEEE 2008 IEEE International Symposium on Circuits and Systems - ISCAS 2008 - Seattle, WA, USA (2008.05.18-2008.05.21)] 2008 IEEE International Symposium on Circuits and Systems - Performance comparison between copper, carbon nanotube, and optical interconnects

Saraswat, Krishna, Hoyeol Cho,, Kapur, Pawan, Kyung-Hoae Koo,

Année:

2008

Langue:

english

Fichier:

PDF, 1.82 MB

english, 2008

18

Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-GaAs Schottky Contacts

Johnson, Jason L., Behnam, Ashkan, Choi, Yongho, Noriega, Leila, Ertosun, Gunhan, Wu, Zhuangchun, Rinzler, Andrew G., Kapur, Pawan, Saraswat, Krishna C., Ural, Ant

Journal:

MRS Proceedings

Année:

2007

Langue:

english

Fichier:

PDF, 1.68 MB

english, 2007

19

Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon

Nam, Ju Hyung, Afshinmanesh, Farzaneh, Nam, Donguk, Jung, Woo Shik, Kamins, Theodore I., Brongersma, Mark L., Saraswat, Krishna C.

Journal:

Année:

2015

Langue:

english

Fichier:

PDF, 2.50 MB

english, 2015

20

[IEEE 2015 IEEE 12th International Conference on Group IV Photonics (GFP) - Vancouver, BC, Canada (2015.8.26-2015.8.28)] 2015 IEEE 12th International Conference on Group IV Photonics (GFP) - Strained Ge nanowire with high-Q optical cavity for Ge laser applications

Nam, Donguk, Petykiewicz, Jan, Sukhdeo, David S., Gupta, Shashank, Buckley, Sonia, Vuckovic, Jelena, Saraswat, Krishna C.

Année:

2015

Langue:

english

Fichier:

PDF, 459 KB

english, 2015

21

SPIE Proceedings [SPIE Rapid thermal and Integrated Processing - San Jose, United States (Tuesday 10 September 1991)] Rapid Thermal and Integrated Processing - Modeling and control of rapid thermal processing

Schaper, Charles D., Cho, Young M., Park, Poogyeon, Norman, Stephen A., Gyugyi, Paul, Hoffmann, G., Balemi, S., Boyd, Stephen P., Franklin, Gregory, Kailath, Thomas, Saraswat, Krishna C., Moslehi, Meh

Année:

1992

Langue:

english

Fichier:

PDF, 875 KB

english, 1992

22

Carrier-selective interlayer materials for silicon solar cell contacts

Xue, Muyu, Islam, Raisul, Chen, Yusi, Chen, Junyan, Lu, Ching-Ying, Mitchell Pleus, A., Tae, Christian, Xu, Ke, Liu, Yi, Kamins, Theodore I., Saraswat, Krishna C., Harris, James S.

Journal:

Journal of Applied Physics

Année:

2018

Langue:

english

Fichier:

PDF, 1.29 MB

english, 2018

23

Device and materials requirements for neuromorphic computing

Islam, Raisul, Li, Haitong, CHEN, PAI-YU, Wan, Weier, Chen, Hong-Yu, Gao, Bin, Wu, Huaqiang, Yu, Shimeng, Saraswat, Krishna C, Wong, Hon-Sum Philip

Journal:

Journal of Physics D Applied Physics

Année:

2018

Langue:

english

Fichier:

PDF, 4.07 MB

english, 2018

24

ChemInform Abstract: Structural Evolution and Point Defects in Metal Oxide-Based High-k Gate Dielectrics

Paul C. McIntyre, Hyoungsub Kim, Krishna C. Saraswat

Journal:

Année:

2009

Fichier:

PDF, 15 KB

2009

25

Quantification of cerebral edema on diffusion tensor imaging in acute-on-chronic liver failure

Kavindra Nath, Vivek A. Saraswat, Yellapu R. Krishna, Michael A. Thomas, Ram K. S. Rathore, Chandra M. Pandey, Rakesh K. Gupta

Journal:

NMR in Biomedicine

Année:

2008

Langue:

english

Fichier:

PDF, 253 KB

english, 2008

26

Adaptable IC Manufacturing systems for the 21st century

Krishna C. Saraswat

Journal:

Microelectronic Engineering

Année:

1994

Langue:

english

Fichier:

PDF, 625 KB

english, 1994

27

Ge based high performance nanoscale MOSFETs

Krishna C. Saraswat, Chi On Chui, Tejas Krishnamohan, Ammar Nayfeh, Paul McIntyre

Journal:

Microelectronic Engineering

Année:

2005

Langue:

english

Fichier:

PDF, 1.28 MB

english, 2005

28

Interface studies of ALD-grown metal oxide insulators on Ge and III–V semiconductors (Invited Paper)

Paul C. McIntyre, Yasuhiro Oshima, Eunji Kim, Krishna C. Saraswat

Journal:

Microelectronic Engineering

Année:

2009

Langue:

english

Fichier:

PDF, 1006 KB

english, 2009

29

High performance germanium MOSFETs

Krishna Saraswat, Chi On Chui, Tejas Krishnamohan, Donghyun Kim, Ammar Nayfeh, Abhijit Pethe

Journal:

Materials Science and Engineering: B

Année:

2006

Langue:

english

Fichier:

PDF, 1.10 MB

english, 2006

30

Study of Shubnikov–de Haas oscillations and measurement of hole effective mass in compressively strained InXGa1−XSb quantum wells

Aneesh Nainani, Toshifumi Irisawa, Brian R. Bennett, J. Brad Boos, Mario G. Ancona, Krishna C. Saraswat

Journal:

Solid-State Electronics

Année:

2011

Langue:

english

Fichier:

PDF, 543 KB

english, 2011

31

Optical interconnects for future high performance integrated circuits

Pawan Kapur, Krishna C. Saraswat

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Année:

2003

Langue:

english

Fichier:

PDF, 595 KB

english, 2003

32

In vivo1H magnetic resonance spectroscopy-derived metabolite variations between acute-on-chronic liver failure and acute liver failure

Ashish Verma, Vivek Anand Saraswat, Y. Radha Krishna, Kavindra Nath, M. Albert Thomas, Rakesh Kumar Gupta

Journal:

Liver International

Année:

2008

Langue:

english

Fichier:

PDF, 214 KB

english, 2008

33

Clinical features and predictors of outcome in acute hepatitis A and hepatitis E virus hepatitis on cirrhosis

Yellapu Radha Krishna, Vivek Anand Saraswat, Khaunish Das, Goel Himanshu, Surender Kumar Yachha, Rakesh Aggarwal, Gour Choudhuri

Journal:

Liver International

Année:

2009

Langue:

english

Fichier:

PDF, 149 KB

english, 2009

34

Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna

Tang, Liang, Kocabas, Sukru Ekin, Latif, Salman, Okyay, Ali K., Ly-Gagnon, Dany-Sebastien, Saraswat, Krishna C., Miller, David A. B.

Journal:

Nature Photonics

Année:

2008

Langue:

english

Fichier:

PDF, 271 KB

english, 2008

35

Conductivity mismatch and voltage dependence of magnetoresistance in a semiconductor spin injection device

Roy, Arunanshu M., Nikonov, Dmitri E., Saraswat, Krishna C.

Journal:

Journal of Applied Physics

Année:

2010

Langue:

english

Fichier:

PDF, 1.25 MB

english, 2010

36

Effect of interfacial oxide on Ge MOSCAP and N-MOSFET characteristics

Duygu Kuzum, Jin-Hong Park, Tejas Krishnamohan, Krishna C. Saraswat

Journal:

Microelectronic Engineering

Année:

2011

Langue:

english

Fichier:

PDF, 434 KB

english, 2011

37

Room temperature 16 μm electroluminescence from Ge light emitting diode on Si substrate

Cheng, Szu-Lin, Lu, Jesse, Shambat, Gary, Yu, Hyun-Yong, Saraswat, Krishna, Vuckovic, Jelena, Nishi, Yoshio

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 409 KB

english, 2009

38

C-shaped nanoaperture-enhanced germanium photodetector

Tang, Liang, Miller, David A., Okyay, Ali K., Matteo, Joseph A., Yuen, Yin, Saraswat, Krishna C., Hesselink, Lambertus

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 125 KB

english, 2006

39

High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si

Okyay, Ali K., Nayfeh, Ammar M., Saraswat, Krishna C., Yonehara, Takao, Marshall, Ann, McIntyre, Paul C.

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 195 KB

english, 2006

40

SiGe optoelectronic metal-oxide semiconductor field-effect transistor

Okyay, Ali K., Pethe, Abhijit J., Kuzum, Duygu, Latif, Salman, Miller, David A., Saraswat, Krishna C.

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 427 KB

english, 2007

41

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope

Krishnamohan, Tejas, Kim, Donghyun, Raghunathan, Shyam, Saraswat, Krishna

Année:

2008

Langue:

english

Fichier:

PDF, 620 KB

english, 2008

42

Enhancing hole mobility in III-V semiconductors

Nainani, Aneesh, Bennett, Brian R., Brad Boos, J., Ancona, Mario G., Saraswat, Krishna C.

Journal:

Journal of Applied Physics

Année:

2012

Langue:

english

Fichier:

PDF, 4.74 MB

english, 2012

43

Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality

Nayfeh, Ammar, Chui, Chi On, Saraswat, Krishna C., Yonehara, Takao

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 684 KB

english, 2004

44

Curcumin and Turmeric Delay Streptozotocin-Induced Diabetic Cataract in Rats

Suryanarayana, Palla, Saraswat, Megha, Mrudula, Tiruvalluru, Krishna, T. Prasanna, Krishnaswamy, Kamala, Reddy, G. Bhanuprakash

Journal:

Investigative Ophthalmology & Visual Science

Année:

2005

Langue:

english

Fichier:

PDF, 271 KB

english, 2005

45

Transistor sizing for AMLCD integrated TFT drive circuits

Satoru Tomita, Steven Jurichich, Krishna C. Saraswat

Journal:

Journal of the Society for Information Display

Année:

1997

Fichier:

PDF, 1.12 MB

1997

46

Atomically abrupt and unpinned Al[sub 2]O[sub 3]/In[sub 0.53]Ga[sub 0.47]As interfaces: Experiment and simulation

Kim, Eun Ji, Chagarov, Evgueni, Cagnon, JoeÌl, Yuan, Yu, Kummel, Andrew C., Asbeck, Peter M., Stemmer, Susanne, Saraswat, Krishna C., McIntyre, Paul C.

Journal:

Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 2.08 MB

english, 2009

47

Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles

Nam, Donguk, Sukhdeo, David S., Kang, Ju-Hyung, Petykiewicz, Jan, Lee, Jae Hyung, Jung, Woo Shik, Vučković, Jelena, Brongersma, Mark L., Saraswat, Krishna C.

Journal:

Année:

2013

Langue:

english

Fichier:

PDF, 3.01 MB

english, 2013

48

[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Engineering of strained III–V heterostructures for high hole mobility

Nainani, Aneesh, Raghunathan, Shyam, Witte, Daniel, Kobayashi, Masaharu, Irisawa, Toshifumi, Krishnamohan, Tejas, Saraswat, Krishna, Bennett, Brian R., Ancona, Mario G., Boos, J. Brad

Année:

2009

Langue:

english

Fichier:

PDF, 1.20 MB

english, 2009

49

Highly Selective Dry Etching of Germanium over Germanium–Tin (Ge 1– x Sn x ): A Novel Route for Ge 1– x Sn x Nanostructure Fabrication

Gupta, Suyog, Chen, Robert, Huang, Yi-Chiau, Kim, Yihwan, Sanchez, Errol, Harris, James S., Saraswat, Krishna C.

Journal:

Année:

2013

Langue:

english

Fichier:

PDF, 1.81 MB

english, 2013

50

Chemical states and electrical properties of a high-k metal oxide/silicon interface with oxygen-gettering titanium-metal-overlayer

Seo, Kang-Ill, Lee, Dong-Ick, Pianetta, Piero, Kim, Hyoungsub, Saraswat, Krishna C., McIntyre, Paul C.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 476 KB

english, 2006